利用La0.7Sr0.3MnO3(LSMO)底电极改进SrFeOx拓扑相变忆阻器的循环稳定性和开关比(Improved cycling stability and ON/OFF ratio of SrFeOx topological phase transition memristors using a La0.7Sr0.3MnO3 bottom electrode)
基于拓扑相变的模拟忆阻突触:用于高性能神经形态计算和神经网络剪枝(Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning)